
By Hongyu Yu,Tianli Duan
ISBN-10: 981477409X
ISBN-13: 9789814774093
GaN is taken into account the main promising fabric candidate in next-generation strength equipment purposes, as a result of its exact fabric houses, for instance, bandgap, excessive breakdown box, and excessive electron mobility. as a result, GaN strength machine applied sciences are indexed because the best precedence to be constructed in lots of nations, together with the USA, the eu Union, Japan, and China.
This publication provides a entire evaluation of GaN strength gadget applied sciences, for instance, fabric progress, estate research, gadget constitution layout, fabrication technique, reliability, failure research, and packaging. It offers necessary details to either scholars and researchers in educational and comparable industries engaged on GaN strength units.
GaN wafer development expertise is from Enkris Semiconductor, at the moment one of many major avid gamers in advertisement GaN wafers. Chapters three and seven, at the GaN transistor fabrication method and GaN vertical strength units, are edited through Dr. Zhihong Liu, who has been engaged on GaN units for greater than ten years. Chapters 2 and five, at the features of polarization results and the unique demonstration of AlGaN/GaN heterojunction field-effect transistors, are written through researchers from Southwest Jiaotong collage. Chapters 6, eight, and nine, on floor passivation, reliability, and package deal applied sciences, are edited by means of a bunch of researchers from the Southern college of technology and expertise of China.
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Gallium Nitride Power Devices by Hongyu Yu,Tianli Duan
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